Datasheet > BSP149_05

BSP149_05

更新时间： 2024-09-15 09:00:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	223K
描述
SIPMOS Small-Signal-Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSP149_05 数据手册

BSP149

SIPMOS^®Small-Signal-Transistor

Product Summary

V _DS

Features

200

Ω

• N-channel

• Depletion mode

R _DS(on),max

I _DSS,min

3.5

0.14

• dv /dt rated

• Available with V _GS(th)indicator on reel

• Pb-free lead plating; RoHS compliant

PG-SOT-223

Type

Package

Tape and Reel Information

Marking

BSP149

PG-SOT-223

L6327: 1000 pcs/reel

L6906: 1000 pcs/reel

sorted in V _GS(th)bands¹⁾

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

Continuous drain current

0.66

0.53

2.6

I _D,pulse

dv /dt

V _GS

T _A=25 °C

I _D=0.66 A,

Pulsed drain current

Reverse diode dv /dt

Gate source voltage

_DS=160 V,

di /dt =200 A/µs,

_j,max=150 °C

kV/µs

±20

ESD sensitivity (HBM) as per

MIL-STD 883

Class 1

P _tot

T _A=25 °C

Power dissipation

1.8

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

¹⁾see table on next page and diagram 11

Rev. 1.2

page 1

2005-11-28

12 3 4 5 6 7...9

中文翻译

下载PDF

与BSP149_05相关器件

型号	品牌	获取价格	描述	数据表
BSP149H6327	INFINEON	获取价格	Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Me
BSP149H6327XTSA1	INFINEON	获取价格	Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Me
BSP149H6906	INFINEON	获取价格	Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Me
BSP149L6327	INFINEON	获取价格	Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Me
BSP149L6906	INFINEON	获取价格	Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Me
BSP15	ZETEX	获取价格	SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
BSP15	YAGEO	获取价格	Power Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
BSP152	NXP	获取价格	N-channel enhancement mode vertical D-MOS transistor
BSP152-T	NXP	获取价格	TRANSISTOR 0.55 A, 200 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
BSP152-TAPE-13	NXP	获取价格	TRANSISTOR 0.55 A, 200 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power