BSP135

更新时间： 2024-09-14 22:27:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	413K
描述
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

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中文翻译

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数据手册
替代型号

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BSP135 数据手册

SIPMOS Small-Signal Transistor

BSP 135

● V_DS

● I_D

600 V

0.100 A

● R_DS(on)60 Ω

● N channel

● Depletion mode

● High dynamic resistance

● Available grouped in V_GS(th)

Type

Ordering

Code

Tape and Reel Information Pin Configuration Marking Package

BSP 135 Q62702-S655 E6327: 1000 pcs/reel

BSP 135 Q67000-S283 E6906: 1000 pcs/reel

BSP 135 SOT-223

V_GS(th)selected in groups:

(see page 219)

Maximum Ratings

Parameter

Symbol

V_DS

Values

600

Unit

Drain-source voltage

Drain-gate voltage, R_GS= 20 kΩ

Gate-source voltage

V_DGR

V_GS

600

± 14

± 20

0.100

0.30

1.7

Gate-source peak voltage, aperiodic

Continuous drain current, T_A= 44 ˚C

V_gs

I_D

Pulsed drain current,

T_A= 25 ˚C

I_{D puls}

P_tot

Max. power dissipation,

Operating and storage temperature range

T_j, T_stg

– 55 … + 150

˚C

Thermal resistance ¹⁾chip-ambient

DIN humidity category, DIN 40 040

R_thJA

K/W

–

chip-soldering point R_thJSR_thJS

–

IEC climatic category, DIN IEC 68-1

55/150/56

Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm²copper area for drain connection.

Semiconductor Group

09.96

12 3 4 5 6 7

中文翻译

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BSP135 替代型号

型号	品牌	替代类型	描述	数据表
BSP324	INFINEON	完全替代	SIPMOS Small-Signal Transistor (N channel Enhancement mode)
BSP125	INFINEON	完全替代	SIPMOS Small-Signal Transistor (N channel Enhancement mode)

与BSP135相关器件

型号	品牌	获取价格	描述	数据表
BSP135_10	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSP135H6327	INFINEON	获取价格	Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met
BSP135H6327XTSA1	INFINEON	获取价格	Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met
BSP135H6433XTMA1	INFINEON	获取价格	Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met
BSP135H6906	INFINEON	获取价格	Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met
BSP135I	INFINEON	获取价格	N-沟道耗尽模式 MOSFET BSP135I 采用 SOT-223 封装，其特性为 VD
BSP135L6327HTSA1	INFINEON	获取价格	Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met
BSP135L6906	INFINEON	获取价格	Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met
BSP135L6906HTSA1	INFINEON	获取价格	Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met
BSP139E-6327	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.04A I(D), 250V, 1-Element, N-Channel, Silicon, Met