生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | compliant | Factory Lead Time: | 10 weeks |
风险等级: | 1.43 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 0.12 A | 最大漏源导通电阻: | 45 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 0.48 A |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP135H6906 | INFINEON |
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Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met | |
BSP135I | INFINEON |
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N-沟道耗尽模式 MOSFET BSP135I 采用 SOT-223 封装,其特性为 VD | |
BSP135L6327HTSA1 | INFINEON |
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Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met | |
BSP135L6906 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met | |
BSP135L6906HTSA1 | INFINEON |
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Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Met | |
BSP139E-6327 | INFINEON |
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Small Signal Field-Effect Transistor, 0.04A I(D), 250V, 1-Element, N-Channel, Silicon, Met | |
BSP145 | NXP |
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N-channel enhancement mode vertical D-MOS transistor | |
BSP145-T | NXP |
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TRANSISTOR 0.75 A, 450 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BSP145-TAPE-13 | NXP |
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TRANSISTOR 0.25 A, 450 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BSP145-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 0.25 A, 450 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |