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BSM600GA120DLCSHOSA1 PDF预览

BSM600GA120DLCSHOSA1

更新时间： 2024-11-16 19:55:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网栅功率控制晶体管
页数 文件大小 规格书
8页 291K
描述
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

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中文翻译

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BSM600GA120DLCSHOSA1 技术参数

生命周期：Active包装说明：FLANGE MOUNT, R-XUFM-X5
Reach Compliance Code：compliant风险等级：5.62
其他特性：UL APPROVED外壳连接：ISOLATED
最大集电极电流 (IC)：900 A集电极-发射极最大电压：1200 V
配置：SINGLE WITH BUILT-IN DIODEJESD-30 代码：R-XUFM-X5
元件数量：1端子数量：5
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：650 ns
标称接通时间 (ton)：190 nsBase Number Matches：1

BSM600GA120DLCSHOSA1 数据手册

 浏览型号BSM600GA120DLCSHOSA1的Datasheet PDF文件第2页浏览型号BSM600GA120DLCSHOSA1的Datasheet PDF文件第3页浏览型号BSM600GA120DLCSHOSA1的Datasheet PDF文件第4页浏览型号BSM600GA120DLCSHOSA1的Datasheet PDF文件第5页浏览型号BSM600GA120DLCSHOSA1的Datasheet PDF文件第6页浏览型号BSM600GA120DLCSHOSA1的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
BSM600GA120DLCS  
62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode  
62mm C-series module with low loss IGBT2 and EmCon diode  
IGBT-Wechselrichter / IGBT-inverter  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1200  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C, TÝÎ = 150°C  
T† = 25°C, TÝÎ = 150°C  
I† ÒÓÑ  
I†  
600  
900  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
1200  
3900  
+/-20  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 150°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 600 A, V•Š = 15 V  
I† = 600 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
2,10 2,60  
2,40 2,90  
V
V
V†Š ÙÈÚ  
V•ŠÚÌ  
Q•  
Gate-Schwellenspannung  
gate threshold voltage  
I† = 24,0 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
4,5  
5,5  
6,40  
0,5  
6,5  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
44,0  
2,80  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
CØþÙ  
I†Š»  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
5,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
I•Š»  
tÁ ÓÒ  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 600 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 3,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,11  
0,12  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 600 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 3,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,06  
0,07  
µs  
µs  
tØ  
tÁ ÓËË  
tË  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 600 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 3,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,55  
0,57  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 600 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 3,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,07  
0,08  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 600 A, V†Š = 600 V  
V•Š = ±15 V, L» = 55 nH  
R•ÓÒ = 3,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
mJ  
mJ  
EÓÒ  
58,0  
105  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 600 A, V†Š = 600 V  
V•Š = ±15 V, L» = 55 nH  
R•ÓËË = 3,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
mJ  
mJ  
EÓËË  
Kurzschlußverhalten  
SC data  
t« ù 10 µs, V•Š ù 15 V  
TÝÎ = 125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
3600  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
0,032 K/W  
K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
RÚ̆™  
0,016  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Martin Knecht  
date of publication: 2004-7-6  
revision: 3.1  
approved by: Wilhelm Rusche  
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