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BSM75GB60DLCHOSA1 PDF预览

BSM75GB60DLCHOSA1

更新时间: 2024-09-28 21:18:39
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网晶体管
页数 文件大小 规格书
9页 126K
描述
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-7

BSM75GB60DLCHOSA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X7针数:7
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:8.5外壳连接:ISOLATED
最大集电极电流 (IC):100 A集电极-发射极最大电压:600 V
配置:SERIES, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 代码:R-XUFM-X7
元件数量:2端子数量:7
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称断开时间 (toff):205 ns标称接通时间 (ton):90 ns
Base Number Matches:1

BSM75GB60DLCHOSA1 数据手册

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Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
BSM 75 GB 60 DLC  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
600  
V
Tc= 75°C  
IC,nom.  
IC  
75  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
Tc= 25°C  
100  
Periodischer Kollektor Spitzenstrom  
tP= 1ms, Tc= 75°C  
ICRM  
Ptot  
VGES  
IF  
150  
355  
A
W
V
repetitive peak collector current  
Gesamt-Verlustleistung  
Tc= 25°C, Transistor  
total power dissipation  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
+/- 20V  
75  
Dauergleichstrom  
DC forward current  
A
Periodischer Spitzenstrom  
tP= 1ms  
IFRM  
150  
A
repetitive peak forw. current  
Grenzlastintegral der Diode  
VR= 0V, tp= 10ms, Tvj= 125°C  
I2t - value, Diode  
I2t  
A2s  
kV  
450  
Isolations-Prüfspannung  
RMS, f= 50Hz, t= 1min.  
insulation test voltage  
VISOL  
2,5  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC= 75A, VGE= 15V, Tvj= 25°C  
-
-
1,95  
2,20  
2,45  
-
V
V
Kollektor-Emitter Sättigungsspannung  
VCE sat  
VGE(th)  
Cies  
collector-emitter saturation voltage  
IC= 75A, VGE= 15V, Tvj= 125°C  
Gate-Schwellenspannung  
IC= 1,5mA, VCE= VGE, Tvj= 25°C  
gate threshold voltage  
4,5  
5,5  
3,3  
0,3  
6,5  
V
Eingangskapazität  
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V  
input capacitance  
-
-
-
-
nF  
nF  
Rückwirkungskapazität  
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V  
reverse transfer capacitance  
Cres  
VCE= 600V, VGE= 0V, Tvj= 25°C  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
VCE= 600V, VGE= 0V, Tvj= 125°C  
-
-
1
1
500  
-
µA  
ICES  
mA  
Gate-Emitter Reststrom  
VCE= 0V, VGE= 20V, Tvj= 25°C  
gate-emitter leakage current  
IGES  
-
-
400  
nA  
prepared by: Andreas Vetter  
date of publication: 2000-04-26  
revision: 1  
approved by: Michael Hornkamp  
BSM 75 GB 60 DLC  
2000-02-08  
1 (8)  

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