Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM75GD120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
VCES
1200
V
TC = 80 °C
TC = 25 °C
IC,nom.
IC
75
A
A
Kollektor-Dauergleichstrom
DC-collector current
125
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P = 1 ms, TC = 80°C
ICRM
150
500
A
W
V
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGES
+/- 20V
75
Dauergleichstrom
DC forward current
IF
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P = 1 ms
IFRM
150
A
Grenzlastintegral der Diode
I2t - value, Diode
I2t
kA2s
kV
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
1,19
2,5
Isolations-Prüfspannung
insulation test voltage
VISOL
Charakteristische Werte / Characteristic values
min. typ. max.
Transistor / Transistor
IC = 75A, VGE = 15V, Tvj = 25°C
VCE sat
-
-
2,1
2,4
2,6
2,9
V
V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 75A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
I
C = 3mA, VCE = VGE, Tvj = 25°C
VGE(th)
4,5
5,5
0,8
6,5
V
Gateladung
gate charge
V
GE = -15V...+15V
QG
-
-
-
-
-
-
µC
nF
nF
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cies
5,1
Rückwirkungskapazität
reverse transfer capacitance
Cres
ICES
0,33
VCE = 1200V, VGE = 0V, Tvj = 25°C
VCE = 1200V, VGE = 0V, Tvj = 125°C
-
-
3
92
-
µA
µA
Kollektor-Emitter Reststrom
collector-emitter cut-off current
300
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE = 0V, VGE = 20V, Tvj = 25°C
IGES
-
-
400
nA
prepared by: Mark Münzer
approved by: M. Hierholzer
date of publication: 09.09.1999
revision: 2
1(8)
Seriendatenblatt_BSM75GD120DLC.xls