Datasheet > BSM75GB170DN2

BSM75GB170DN2

更新时间： 2024-09-27 22:18:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管双极性晶体管栅局域网
页数	文件大小	规格书
9页	116K
描述
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

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BSM75GB170DN2 数据手册

BSM 75 GB 170 DN2

IGBT Power Module

Preliminary data

• Half-bridge

• Including fast free-wheeling diodes

• Package with insulated metal base plate

• R

= 22 Ohm

G on,min

Type

Package

Ordering Code

BSM 75 GB 170 DN2

1700V 110A HALF-BRIDGE 1

C67070-A2702-A67

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

1700

CGR

Ω

= 20 k

1700

± 20

Gate-emitter voltage

DC collector current

T = 25 °C

110

T = 80 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 25 °C

220

150

T = 80 °C

Power dissipation per IGBT

tot

T = 25 °C

625

Chip temperature

+ 150

°C

Storage temperature

-55 ... + 150

stg

≤

Thermal resistance, chip case

Diode thermal resistance, chip case

Insulation test voltage, t = 1min.

Creepage distance

0.2

K/W

thJC

thJCD

≤

0.63

4000

Vac

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

Semiconductor Group

Jul-16-1996

12 3 4 5 6 7...9

中文翻译

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