5秒后页面跳转
BSM75GB120DN2 PDF预览

BSM75GB120DN2

更新时间: 2024-11-05 22:18:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
9页 116K
描述
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

BSM75GB120DN2 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X7针数:7
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:7.67外壳连接:ISOLATED
最大集电极电流 (IC):75 A集电极-发射极最大电压:1200 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X7元件数量:2
端子数量:7最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):625 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):520 ns标称接通时间 (ton):100 ns
VCEsat-Max:3.2 VBase Number Matches:1

BSM75GB120DN2 数据手册

 浏览型号BSM75GB120DN2的Datasheet PDF文件第2页浏览型号BSM75GB120DN2的Datasheet PDF文件第3页浏览型号BSM75GB120DN2的Datasheet PDF文件第4页浏览型号BSM75GB120DN2的Datasheet PDF文件第5页浏览型号BSM75GB120DN2的Datasheet PDF文件第6页浏览型号BSM75GB120DN2的Datasheet PDF文件第7页 
BSM 75 GB 120 DN2  
IGBT Power Module  
• Half-bridge  
• Including fast free-wheeling diodes  
• Package with insulated metal base plate  
Type  
V
I
Package  
Ordering Code  
CE  
C
BSM 75 GB 120 DN2  
1200V 105A HALF-BRIDGE 1  
C67076-A2106-A70  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-gate voltage  
V
V
1200  
V
CE  
CGR  
R
= 20 kΩ  
1200  
± 20  
GE  
Gate-emitter voltage  
DC collector current  
V
GE  
I
I
A
C
T = 25 °C  
105  
75  
C
T = 80 °C  
C
Pulsed collector current, t = 1 ms  
p
Cpuls  
T = 25 °C  
210  
150  
C
T = 80 °C  
C
Power dissipation per IGBT  
P
W
tot  
T = 25 °C  
625  
C
Chip temperature  
T
+ 150  
°C  
j
Storage temperature  
T
-55 ... + 150  
stg  
Thermal resistance, chip case  
Diode thermal resistance, chip case  
Insulation test voltage, t = 1min.  
Creepage distance  
R
R
0.2  
K/W  
thJC  
thJCD  
is  
0.5  
V
-
2500  
Vac  
mm  
20  
Clearance  
-
11  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
-
F
-
-
55 / 150 / 56  
Semiconductor Group  
1
Mar-29-1996  

BSM75GB120DN2 替代型号

型号 品牌 替代类型 描述 数据表
CM75DU-24F MITSUBISHI

功能相似

HIGH POWER SWITCHING USE
CM75DU-24H POWEREX

功能相似

Dual IGBTMOD 75 Amperes/1200 Volts
CM75DU-24F POWEREX

功能相似

Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1

与BSM75GB120DN2相关器件

型号 品牌 获取价格 描述 数据表
BSM75GB160D ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.6KV V(BR)CES | 100A I(C)
BSM75GB170DN2 INFINEON

获取价格

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated
BSM75GB170DN2 EUPEC

获取价格

IGBT Power Module
BSM75GB60DLC EUPEC

获取价格

Hchstzulssige Werte Maximum rated values
BSM75GB60DLCHOSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-7
BSM75GD120DLC ETC

获取价格

IGBT Module
BSM75GD120DN2 INFINEON

获取价格

IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel d
BSM75GD60DLC ETC

获取价格

IGBT Module
BSM75GP60 ETC

获取价格

IGBT Module
BSMT05-05-075 BTCPOWER

获取价格

5A SIP & SMT 5V Input DC-DC Converters