生命周期: | Transferred | 包装说明: | HALF-BRIDGE 1, 7 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.7 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 75 A | 集电极-发射极最大电压: | 1700 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X7 | 元件数量: | 2 |
端子数量: | 7 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 625 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 740 ns |
标称接通时间 (ton): | 550 ns | VCEsat-Max: | 3.9 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSM75GB60DLC | EUPEC |
获取价格 |
Hchstzulssige Werte Maximum rated values | |
BSM75GB60DLCHOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | |
BSM75GD120DLC | ETC |
获取价格 |
IGBT Module | |
BSM75GD120DN2 | INFINEON |
获取价格 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel d | |
BSM75GD60DLC | ETC |
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IGBT Module | |
BSM75GP60 | ETC |
获取价格 |
IGBT Module | |
BSMT05-05-075 | BTCPOWER |
获取价格 |
5A SIP & SMT 5V Input DC-DC Converters | |
BSMT05-05-120 | BTCPOWER |
获取价格 |
5A SIP & SMT 5V Input DC-DC Converters | |
BSMT05-05-150 | BTCPOWER |
获取价格 |
5A SIP & SMT 5V Input DC-DC Converters | |
BSMT05-05-180 | BTCPOWER |
获取价格 |
5A SIP & SMT 5V Input DC-DC Converters |