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BSM75GB120DLC PDF预览

BSM75GB120DLC

更新时间: 2024-11-15 22:18:11
品牌 Logo 应用领域
EUPEC 晶体晶体管局域网
页数 文件大小 规格书
8页 79K
描述
Hchstzulssige Werte Maximum rated values

BSM75GB120DLC 数据手册

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Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
BSM75GB120DLC  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
1200  
V
TC = 80 °C  
TC = 25 °C  
IC,nom.  
IC  
75  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
170  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t
P = 1 ms, TC = 80°C  
ICRM  
150  
690  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
75  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
t
P = 1 ms  
IFRM  
150  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
kA2s  
kV  
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
1,19  
2,5  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 75A, VGE = 15V, Tvj = 25°C  
VCE sat  
-
-
2,1  
2,4  
2,6  
2,9  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 75A, VGE = 15V, Tvj = 125°C  
Gate-Schwellenspannung  
gate threshold voltage  
I
C = 3mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
4,5  
5,5  
0,8  
6,5  
V
Gateladung  
gate charge  
V
GE = -15V...+15V  
QG  
-
-
-
-
-
-
µC  
nF  
nF  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
Cies  
5,1  
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
ICES  
0,33  
VCE = 1200V, VGE = 0V, Tvj = 25°C  
VCE = 1200V, VGE = 0V, Tvj = 125°C  
-
-
3
92  
-
µA  
µA  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
300  
Gate-Emitter Reststrom  
gate-emitter leakage current  
V
CE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
-
-
400  
nA  
prepared by: Mark Münzer  
approved by: M. Hierholzer  
date of publication: 9.9.1999  
revision: 2  
1(8)  
Seriendatenblatt_BSM75GB120DLC.xls  

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