是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TO-236 | 包装说明: | PLASTIC, SMD, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.06 | 其他特性: | LOGIC LEVEL COMPATIBLE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 1.05 A | 最大漏极电流 (ID): | 1.05 A |
最大漏源导通电阻: | 0.25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.417 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BSH105,215 | NXP |
类似代替 ![]() |
BSH105 - N-channel vertical D-MOS logic level FET TO-236 3-Pin |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSH105/T3 | NXP |
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TRANSISTOR 1050 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET Ge |
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BSH105T/R | NXP |
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TRANSISTOR 1050 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET Ge |
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BSH105TRL | NXP |
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TRANSISTOR 1050 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S |
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BSH105TRL13 | NXP |
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TRANSISTOR 1050 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S |
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BSH106 | NXP |
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N-channel enhancement mode MOS transistor |
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BSH106/T3 | NXP |
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TRANSISTOR 1050 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-88, 6 PIN, FET General P |
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BSH106T/R | NXP |
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TRANSISTOR 1050 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-88, 6 PIN, FET General P |
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BSH107 | NXP |
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N-channel enhancement mode MOS transistor |
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BSH108 | NXP |
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N-channel enhancement mode field-effect transistor |
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BSH108 | TYSEMI |
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N-channel enhancement mode field-effect transistor Very fast switching |
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