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BSH114-215 PDF预览

BSH114-215

更新时间: 2024-02-19 02:23:06
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
13页 310K
描述
N-channel enhancement mode field effect transistor

BSH114-215 数据手册

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BSH114  
N-channel enhancement mode field effect transistor  
Rev. 01 — 09 November 2000  
Product specification  
M3D088  
1. Description  
N-channel enhancement mode field-effect transistor in a plastic package using  
TrenchMOS1 technology.  
Product availability:  
BSH114 in SOT23.  
2. Features  
TrenchMOS™ technology  
Low on-state resistance  
Very fast switching  
Surface mount package.  
3. Applications  
Relay driver  
DC to DC converter  
General purpose switch.  
c
c
4. Pinning information  
Table 1: Pinning - SOT23, simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
3
d
s
2
source (s)  
drain (d)  
3
g
1
2
MBB076  
Top view  
MSB003  
SOT23  
1. TrenchMOS is a trademark of Royal Philips Electronics.  

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