是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.29 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 0.85 A | 最大漏源导通电阻: | 0.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BSH114,215 | NXP |
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BSH114 - N-channel TrenchMOS standard level FET TO-236 3-Pin |
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BSH114,215 | NXP |
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BSH114 - N-channel TrenchMOS standard level FET TO-236 3-Pin |
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BSH114-215 | NXP |
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BSH114TRL | NXP |
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BSH114TRL13 | NXP |
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BSH-120-01-C-D | SAMTEC |
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BSH-120-01-C-D-A | SAMTEC |
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BSH-120-01-C-D-A-TR | SAMTEC |
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BSH-120-01-C-D-LC | SAMTEC |
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BSH-120-01-C-D-LC-TR | SAMTEC |
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Board Stacking Connector, 240 Contact(s), 2 Row(s), Female, Straight, Surface Mount Termin |
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BSH-120-01-C-D-TR | SAMTEC |
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