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BSH114,215 PDF预览

BSH114,215

更新时间: 2024-02-26 01:45:52
品牌 Logo 应用领域
恩智浦 - NXP PC开关光电二极管晶体管
页数 文件大小 规格书
13页 103K
描述
BSH114 - N-channel TrenchMOS standard level FET TO-236 3-Pin

BSH114,215 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-236针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:2.86
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):0.85 A最大漏极电流 (ID):0.85 A
最大漏源导通电阻:0.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.83 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSH114,215 数据手册

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BSH114  
N-channel enhancement mode field effect transistor  
Rev. 01 — 09 November 2000  
Product specification  
M3D088  
1. Description  
N-channel enhancement mode field-effect transistor in a plastic package using  
TrenchMOS1 technology.  
Product availability:  
BSH114 in SOT23.  
2. Features  
TrenchMOS™ technology  
Low on-state resistance  
Very fast switching  
Surface mount package.  
3. Applications  
Relay driver  
DC to DC converter  
General purpose switch.  
c
c
4. Pinning information  
Table 1: Pinning - SOT23, simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
3
d
s
2
source (s)  
drain (d)  
3
g
1
2
MBB076  
Top view  
MSB003  
SOT23  
1. TrenchMOS is a trademark of Royal Philips Electronics.  
 
 
 

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