是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.29 |
其他特性: | LOGIC LEVEL COMPATIBLE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 1.9 A |
最大漏源导通电阻: | 0.14 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSH108TRL13 | NXP |
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TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo |
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BSH111 | PHILIPS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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BSH111 | NXP |
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N-channel enhancement mode field-effect transistor |
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BSH111,215 | NXP |
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N-channel TrenchMOS extremely low level FET TO-236 3-Pin |
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BSH111BK | NXP |
获取价格 |
SMALL SIGNAL, FET |
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BSH111BK | NEXPERIA |
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55 V, N-channel Trench MOSFETProduction |
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BSH112 | NXP |
获取价格 |
N-channel enhancement mode field-effect transistor |
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BSH112,235 | NXP |
获取价格 |
BSH112 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin |
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BSH114 | NXP |
获取价格 |
N-channel enhancement mode field effect transistor |
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BSH114,215 | NXP |
获取价格 |
BSH114 - N-channel TrenchMOS standard level FET TO-236 3-Pin |
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