BSH112

更新时间： 2024-02-21 03:57:33

品牌	Logo	应用领域
恩智浦 - NXP		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
13页	272K
描述
N-channel enhancement mode field-effect transistor

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BSH112 技术参数

BSH112

N-channel enhancement mode ﬁeld-effect transistor

Rev. 01 — 25 August 2000

Product speciﬁcation

M3D088

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™¹technology.

Product availability:

BSH112 in SOT23.

2. Features

■ TrenchMOS™ technology

■ Very fast switching

■ Logic level compatible

■ Subminiature surface mount package

■ Gate-source ESD protection diodes.

3. Applications

■ Relay driver

■ High speed line driver

■ Logic level translator.

4. Pinning information

Table 1: Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

source (s)

drain (d)

03ab44

03ab60

SOT23

N-channel MOSFET

1. TrenchMOS is a trademark of Royal Philips Electronics.

12 3 4 5 6 7...13

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型号	品牌	获取价格	描述	数据表
BSH112,235	NXP	获取价格	BSH112 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin
BSH114	NXP	获取价格	N-channel enhancement mode field effect transistor
BSH114,215	NXP	获取价格	BSH114 - N-channel TrenchMOS standard level FET TO-236 3-Pin
BSH114-215	NXP	获取价格	N-channel enhancement mode field effect transistor
BSH114TRL	NXP	获取价格	TRANSISTOR 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo
BSH114TRL13	NXP	获取价格	TRANSISTOR 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo
BSH-120-01-C-D	SAMTEC	获取价格	Board Connector, 240 Contact(s), 2 Row(s), Female, Straight, Surface Mount Terminal, Socke
BSH-120-01-C-D-A	SAMTEC	获取价格	Board Stacking Connector, 240 Contact(s), 2 Row(s), Female, Straight, Surface Mount Termin
BSH-120-01-C-D-A-TR	SAMTEC	获取价格	Board Stacking Connector, 240 Contact(s), 2 Row(s), Female, Straight, Surface Mount Termin
BSH-120-01-C-D-LC	SAMTEC	获取价格	Board Connector