Datasheet > BSH111

BSH111

更新时间： 2024-02-13 12:55:30

品牌	Logo	应用领域
飞利浦 - PHILIPS		开关光电二极管晶体管
页数	文件大小	规格书
13页	101K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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BSH111 技术参数

BSH111

N-channel enhancement mode ﬁeld-effect transistor

Rev. 02 — 26 April 2002

Product data

M3D088

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

Product availability:

BSH111 in SOT23.

2. Features

■ TrenchMOS™ technology

■ Very fast switching

■ Low threshold voltage

■ Subminiature surface mount package.

3. Applications

■ Battery management

■ High speed switch

■ Logic level translator.

4. Pinning information

Table 1: Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

source (s)

drain (d)

MBB076

Top view

MSB003

SOT23

12 3 4 5 6 7...13

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型号	品牌	获取价格	描述	数据表
BSH111,215	NXP	获取价格	N-channel TrenchMOS extremely low level FET TO-236 3-Pin
BSH111BK	NXP	获取价格	SMALL SIGNAL, FET
BSH111BK	NEXPERIA	获取价格	55 V, N-channel Trench MOSFETProduction
BSH112	NXP	获取价格	N-channel enhancement mode field-effect transistor
BSH112,235	NXP	获取价格	BSH112 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin
BSH114	NXP	获取价格	N-channel enhancement mode field effect transistor
BSH114,215	NXP	获取价格	BSH114 - N-channel TrenchMOS standard level FET TO-236 3-Pin
BSH114-215	NXP	获取价格	N-channel enhancement mode field effect transistor
BSH114TRL	NXP	获取价格	TRANSISTOR 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo
BSH114TRL13	NXP	获取价格	TRANSISTOR 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo