Datasheet > BSH111BK

BSH111BK

更新时间： 2023-09-03 20:27:56

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
16页	736K
描述
55 V, N-channel Trench MOSFETProduction

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技术参数
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BSH111BK 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.66
Base Number Matches：	1

BSH111BK 数据手册

BSH111BK

55 V, N-channel Trench MOSFET

26 November 2014

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

Low threshold voltage

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 3 kV HBM

•

3. Applications

Relay driver

•

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-10

V_GS= 4.5 V; T_amb= 25 °C

V_GS= 4.5 V; T_sp= 25 °C

[1]

210

335

Static characteristics

R_DSondrain-source on-state

V_GS= 4.5 V; I_D= 200 mA; T_j= 25 °C

2.3

resistance

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

[1]

12 3 4 5 6 7...16

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