Datasheet > BSH108

BSH108

更新时间： 2024-02-03 20:55:30

品牌	Logo	应用领域
TYSEMI		晶体晶体管场效应晶体管开关光电二极管
页数	文件大小	规格书
2页	221K
描述
N-channel enhancement mode field-effect transistor Very fast switching

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BSH108 技术参数

Product specification

BSH108

N-channel enhancement mode ﬁeld-effect transistor

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™¹technology.

Product availability:

BSH108 in SOT23.

2. Features

■ TrenchMOS™ technology

■ Very fast switching

■ Logic level compatible

■ Subminiature surface mount package.

3. Applications

■ Battery management

■ High speed switch

■ Low power DC to DC converter.

4. Pinning information

Table 1: Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

source (s)

drain (d)

MBB076

Top view

MSB003

SOT23

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型号	品牌	获取价格	描述	数据表
BSH108,215	NXP	获取价格	N-channel TrenchMOS logic level FET TO-236 3-Pin
BSH108T/R	NXP	获取价格	TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo
BSH108TRL	NXP	获取价格	TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo
BSH108TRL13	NXP	获取价格	TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo
BSH111	PHILIPS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
BSH111	NXP	获取价格	N-channel enhancement mode field-effect transistor
BSH111,215	NXP	获取价格	N-channel TrenchMOS extremely low level FET TO-236 3-Pin
BSH111BK	NXP	获取价格	SMALL SIGNAL, FET
BSH111BK	NEXPERIA	获取价格	55 V, N-channel Trench MOSFETProduction
BSH112	NXP	获取价格	N-channel enhancement mode field-effect transistor