Datasheet > BSH107

BSH107

更新时间： 2024-02-14 18:36:18

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
7页	156K
描述
N-channel enhancement mode MOS transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BSH107 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.8 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

BSH107 数据手册

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH107

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Very low threshold voltage

• Fast switching

V_DS= 20 V

• Logic level compatible

• Subminiature surface mount

package

I_D= 1.75 A

_DS(ON)≤ 90 mΩ (V_GS= 2.5 V)

V_GS(TO)≥ 0.4 V

GENERAL DESCRIPTION

PINNING

SOT457

N-channel, enhancement mode,

logic level, field-effect power

transistor. This device has very low

threshold voltage and extremely

fast switching making it ideal for

battery powered applications and

high speed digital interfacing.

DESCRIPTION

1,2,5,6 drain

Top view

gate

source

The BSH107 is supplied in the

SOT457 subminiature surface

mounting package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

V_GS

I_D

Drain-source voltage

± 8

1.75

1.1

0.417

0.17

150

Drain-gate voltage

Gate-source voltage

Drain current (DC)

R_GS= 20 kΩ

T_a= 25 ˚C

T_a= 100 ˚C

T_a= 25 ˚C

T_a= 100 ˚C

I_DM

P_tot

Drain current (pulse peak value)

Total power dissipation

˚C

T_stg, T_j

Storage & operating temperature

- 55

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R_{th j-a}

Thermal resistance junction to

ambient

FR4 board, minimum

footprint

300

K/W

August 1998

Rev 1.000

12 3 4 5 6 7

中文翻译

下载PDF

与BSH107相关器件

型号	品牌	获取价格	描述	数据表
BSH108	NXP	获取价格	N-channel enhancement mode field-effect transistor
BSH108	TYSEMI	获取价格	N-channel enhancement mode field-effect transistor Very fast switching
BSH108,215	NXP	获取价格	N-channel TrenchMOS logic level FET TO-236 3-Pin
BSH108T/R	NXP	获取价格	TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo
BSH108TRL	NXP	获取价格	TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo
BSH108TRL13	NXP	获取价格	TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo
BSH111	PHILIPS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
BSH111	NXP	获取价格	N-channel enhancement mode field-effect transistor
BSH111,215	NXP	获取价格	N-channel TrenchMOS extremely low level FET TO-236 3-Pin
BSH111BK	NXP	获取价格	SMALL SIGNAL, FET