Datasheet > BSH108T/R

BSH108T/R

更新时间： 2024-01-31 12:18:23

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
13页	318K
描述
TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal

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BSH108T/R 技术参数

BSH108

N-channel enhancement mode ﬁeld-effect transistor

Rev. 02 — 25 October 2000

Product speciﬁcation

M3D088

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™¹technology.

Product availability:

BSH108 in SOT23.

2. Features

■ TrenchMOS™ technology

■ Very fast switching

■ Logic level compatible

■ Subminiature surface mount package.

3. Applications

■ Battery management

■ High speed switch

■ Low power DC to DC converter.

4. Pinning information

Table 1: Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

source (s)

drain (d)

MBB076

Top view

MSB003

SOT23

1. TrenchMOS is a trademark of Royal Philips Electronics.

12 3 4 5 6 7...13

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型号	品牌	获取价格	描述	数据表
BSH108TRL	NXP	获取价格	TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo
BSH108TRL13	NXP	获取价格	TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo
BSH111	PHILIPS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
BSH111	NXP	获取价格	N-channel enhancement mode field-effect transistor
BSH111,215	NXP	获取价格	N-channel TrenchMOS extremely low level FET TO-236 3-Pin
BSH111BK	NXP	获取价格	SMALL SIGNAL, FET
BSH111BK	NEXPERIA	获取价格	55 V, N-channel Trench MOSFETProduction
BSH112	NXP	获取价格	N-channel enhancement mode field-effect transistor
BSH112,235	NXP	获取价格	BSH112 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin
BSH114	NXP	获取价格	N-channel enhancement mode field effect transistor