生命周期: | Obsolete | 零件包装代码: | SC-88 |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.76 |
其他特性: | LOGIC LEVEL COMPATIBLE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 1.05 A |
最大漏源导通电阻: | 0.25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSH106/T3 | NXP |
获取价格 |
TRANSISTOR 1050 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-88, 6 PIN, FET General P |
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BSH106T/R | NXP |
获取价格 |
TRANSISTOR 1050 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-88, 6 PIN, FET General P |
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BSH107 | NXP |
获取价格 |
N-channel enhancement mode MOS transistor |
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BSH108 | NXP |
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N-channel enhancement mode field-effect transistor |
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BSH108 | TYSEMI |
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N-channel enhancement mode field-effect transistor Very fast switching |
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BSH108,215 | NXP |
获取价格 |
N-channel TrenchMOS logic level FET TO-236 3-Pin |
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BSH108T/R | NXP |
获取价格 |
TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo |
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BSH108TRL | NXP |
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TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo |
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BSH108TRL13 | NXP |
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TRANSISTOR 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpo |
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BSH111 | PHILIPS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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