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BSC100N06LS3GXT PDF预览

BSC100N06LS3GXT

更新时间: 2024-11-05 13:05:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 324K
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BSC100N06LS3GXT 数据手册

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BSC100N06LS3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
Features  
V DS  
60  
10  
50  
V
• Ideal for high frequency switching and sync. rec.  
• Optimized technology for DC/DC converters  
• Excellent gate charge x R DS(on) product (FOM)  
R DS(on),max  
I D  
m  
A
• Superior thermal resistance  
• N-channel, logic level  
• 100% avalanche tested  
• Pb-free plating; RoHS compliant  
• Qualified according to JEDEC1) for target applications  
• Halogen-free according to IEC61249-2-21  
Type  
BSC100N06LS3 G  
Package  
Marking  
PG-TDSON-8  
100N06LS  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
50  
Parameter  
Symbol Conditions  
Unit  
I D  
V
V
GS=10 V, T C=25 °C  
Continuous drain current  
A
GS=10 V, T C=100 °C  
36  
V
V
GS=4.5 V, T C=25 °C  
41  
26  
GS=4.5 V,  
T C=100 °C  
V
R
GS=10 V, T A=25 °C,  
12  
thJA=50 K/W2)  
Pulsed drain current3)  
I D,pulse  
E AS  
T C=25 °C  
200  
22  
Avalanche energy, single pulse4)  
I D=50 A, R GS=25 Ω  
mJ  
V
V GS  
Gate source voltage  
1) J-STD20 and JESD22  
±20  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3)
See figure 3 for more detailed information  
4) See figure 13 for more detailed information  
Rev. 2.2  
page 1  
2010-08-31  

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