Datasheet > BSC117N08NS5

BSC117N08NS5

更新时间： 2024-11-14 11:15:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1311K
描述
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.

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BSC117N08NS5 数据手册

BSC117N08NS5

MOSFET

OptiMOS^TM5ꢀPower-Transistor,ꢀ80ꢀV

SuperSO8

Features

•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀrec.

•ꢀ100%ꢀavalancheꢀtested

•ꢀSuperiorꢀthermalꢀresistance

•ꢀN-channel

•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC¹⁾ꢀꢀforꢀtargetꢀapplications

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

S 1

8 D

7 D

Parameter

Value

Unit

S 2

S 3

G 4

V_DS

R_DS(on),max

I_D

11.7

mΩ

6 D

5 D

Q_oss

Q_G(0V..10V)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

BSC117N08NS5

PG-TDSON-8

117N08NS

¹⁾J-STD20 and JESD22

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2020-02-07

12 3 4 5 6 7...13

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