Datasheet > BSC119N03SG_09

BSC119N03SG_09

更新时间： 2024-11-05 06:44:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	380K
描述
OptiMOS™2 Power-Transistor

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中文翻译

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数据手册

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BSC119N03SG_09 数据手册

BSC119N03S G

OptiMOS™2 Power-Transistor

Product Summary

Features

V _DS

11.9

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC converters

• Qualified according to JEDEC¹⁾for target applications

R _DS(on),max

I _D

mΩ

PG-TDSON-8

• N-channel; Logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• Superior thermal resistance

• Avalanche rated

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSC119N03S G

PG-TDSON-8

119N03S

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

Continuous drain current

T _C=100 °C

T _A=25 °C,

11.9

_thJA=45 K/W²⁾

T _C=25 °C³⁾

I _D,pulse

E _AS

Pulsed drain current

120

I _D=30 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=30 A, V _DS=24 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=150 °C

V _GS

P _tot

Gate source voltage

Power dissipation

±20

T _C=25 °C

T _A=25 °C,

2.8

_thJA=45 K/W²⁾

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

Rev. 1.91

page 1

2009-11-04

12 3 4 5 6 7...10

中文翻译

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