Datasheet > BSC106N025SG_09

BSC106N025SG_09

更新时间： 2024-09-25 06:44:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	379K
描述
OptiMOS™2 Power-Transistor

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中文翻译

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数据手册

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BSC106N025SG_09 数据手册

BSC106N025S G

OptiMOS™2 Power-Transistor

Product Summary

Features

V _DS

10.6

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC converters

• Qualified according to JEDEC¹for target applications

R _DS(on),max

I _D

mΩ

PG-TDSON-8

• Logic level / N-channel

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• Superior thermal resistance

• Avalanche rated; dv/dt rated

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSC106N025S G

PG-TDSON-8

106N025S

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

Continuous drain current

T _C=100 °C

T _A=25 °C,

_thJA=45 K/W²⁾

T _C=25 °C³⁾

I _D,pulse

E _AS

Pulsed drain current

120

I _D=30 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=30 A, V _DS=24 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=150 °C

V _GS

P _tot

Gate source voltage

Power dissipation

±20

T _C=25 °C

T _A=25 °C,

2.8

_thJA=45 K/W²⁾

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

Rev. 1.4

page 1

2009-11-03

12 3 4 5 6 7...10

中文翻译

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