生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F5 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.81 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 10 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.0119 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F5 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 156 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC119N03LSCGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Me | |
BSC119N03MSCG | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Me | |
BSC119N03MSCGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Me | |
BSC119N03S | INFINEON |
获取价格 |
OptiMOS2 Power-Transistor | |
BSC119N03SG | INFINEON |
获取价格 |
OptiMOS2 Power-Transistor | |
BSC119N03SG_09 | INFINEON |
获取价格 |
OptiMOS™2 Power-Transistor | |
BSC119N03SGAUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11.9A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, | |
BSC120N03LS G | INFINEON |
获取价格 |
极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS™ 25V 成 | |
BSC120N03LSG | INFINEON |
获取价格 |
OptiMOS™3 Power-MOSFET | |
BSC120N03LSGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met |