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BSC119N03LSCG PDF预览

BSC119N03LSCG

更新时间: 2024-11-24 21:18:11
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 384K
描述
Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

BSC119N03LSCG 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F5
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.81
其他特性:AVALANCHE RATED雪崩能效等级(Eas):10 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):12 A
最大漏源导通电阻:0.0119 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F5元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):156 A
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSC119N03LSCG 数据手册

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BSC119N03LSC G  
Product Summary  
OptiMOS™3 Power-MOSFET  
Features  
V DS  
30  
11.9  
39  
V
• Fast switching MOSFET for SMPS  
• Optimized technology for DC/DC converters  
R DS(on),max  
I D  
m  
A
• Improved switching behaviour  
• Qualified according to JEDEC1) for target applications  
PG-TDSON-8  
• N-channel; Logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• Superior thermal resistance  
• Avalanche rated  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
Package  
Marking  
BSC119N03LSC G  
PG-TDSON-8  
119N03LS  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V
V
GS=10 V, T C=25 °C  
Continuous drain current  
39  
25  
A
GS=10 V, T C=100 °C  
V
V
GS=4.5 V, T C=25 °C  
35  
22  
GS=4.5 V,  
T C=100 °C  
V
R
GS=10 V, T A=25 °C,  
12  
thJA=50 K/W2)  
Pulsed drain current3)  
I D,pulse  
I AS  
T C=25 °C  
156  
35  
Avalanche current, single pulse4)  
Avalanche energy, single pulse  
Gate source voltage  
T C=25 °C  
E AS  
V GS  
I D=25 A, R GS=25 Ω  
10  
mJ  
V
±20  
1) J-STD20 and JESD22  
Rev. 2.2  
page 1  
2009-11-03  

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