BSC106N025S

更新时间： 2024-09-25 03:22:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	370K
描述
OptiMOS㈢2 Power-Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSC106N025S 数据手册

BSC106N025S G

OptiMOS^®2 Power-Transistor

Product Summary

Features

V _DS

10.6

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC converters

• Qualified according to JEDEC¹for target applications

R _DS(on),max

I _D

mΩ

• Logic level / N-channel

• Excellent gate charge x R _DS(on)product (FOM)

PG-TDSON-8

• Very low on-resistance R _DS(on)

• Superior thermal resistance

• Avalanche rated

• dv /dt rated

• Pb-free lead plating; RoHS compliant

Type

Package

Marking

BSC106N025S G

PG-TDSON-8

106N025S

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

Continuous drain current

T _C=100 °C

T _A=25 °C,

_thJA=45 K/W²⁾

T _C=25 °C³⁾

I _D,pulse

E _AS

Pulsed drain current

120

I _D=30 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=30 A, V _DS=24 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=150 °C

V _GS

P _tot

Gate source voltage

Power dissipation

±20

T _C=25 °C

T _A=25 °C,

2.8

_thJA=45 K/W²⁾

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

Rev. 0.94

page 1

2006-05-10

12 3 4 5 6 7...10

中文翻译

下载PDF

与BSC106N025S相关器件

型号	品牌	获取价格	描述	数据表
BSC106N025SG	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor
BSC106N025SG_09	INFINEON	获取价格	OptiMOS™2 Power-Transistor
BSC109N10NS3 G	INFINEON	获取价格	英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM
BSC109N10NS3G	INFINEON	获取价格	OptiMOSTM3 Power-Transistor
BSC109N10NS3GATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 63A I(D), 100V, 0.0109ohm, 1-Element, N-Channel, Silicon, M
BSC110N06NS3 G	INFINEON	获取价格	OptiMOS ? 60V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器
BSC110N06NS3G	INFINEON	获取价格	OptiMOS3 Power-Transistor
BSC110N15NS5	INFINEON	获取价格	Power Field-Effect Transistor, 76A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Me
BSC110N15NS5ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 76A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Me
BSC110N15NS5SC	INFINEON	获取价格	OptiMOS? 5?power MOSFETs 150 V in SuperSO8 DSC (dual-side cooling) package offer all therm