型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC119N03SG | INFINEON |
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OptiMOS2 Power-Transistor | |
BSC119N03SG_09 | INFINEON |
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OptiMOS™2 Power-Transistor | |
BSC119N03SGAUMA1 | INFINEON |
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Power Field-Effect Transistor, 11.9A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, | |
BSC120N03LS G | INFINEON |
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极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS™ 25V 成 | |
BSC120N03LSG | INFINEON |
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OptiMOS™3 Power-MOSFET | |
BSC120N03LSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
BSC120N03MS G | INFINEON |
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极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS? 25V 成 | |
BSC120N03MSG | INFINEON |
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OptiMOS™3 M-Series Power-MOSFET | |
BSC120N03MS-G | INFINEON |
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OptiMOSâ¢3 M-Series Power-MOSFET | |
BSC120N12LS G | INFINEON |
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逻辑电平 OptiMOS? 3 功率 MOSFET 特别适用于?充电、?适配器?和?电信等 |