Datasheet > BSC110N06NS3G

BSC110N06NS3G

更新时间： 2024-11-20 06:44:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	324K
描述
OptiMOS3 Power-Transistor

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中文翻译

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数据手册

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BSC110N06NS3G 数据手册

Type

BSC110N06NS3 G

OptiMOS^TM3 Power-Transistor

Features

Product Summary

V _DS

• Ideal for high frequency switching and sync. rec.

• Optimized technology for DC/DC converters

• Excellent gate charge x R _DS(on)product (FOM)

R _DS(on),max

I _D

mΩ

• Superior thermal resistance

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target applications

• Halogen-free according to IEC61249-2-21

Type

BSC110N06NS3 G

Package

Marking

PG-TDSON-8

110N06NS

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

_GS=10 V, T _C=25 °C

Continuous drain current

_GS=10 V, T _C=100 °C

_GS=10 V, T _C=25 °C,

_thJA=50K/W²⁾

Pulsed drain current³⁾

I _D,pulse

E _AS

T _C=25 °C

200

Avalanche energy, single pulse⁴⁾

I _D=50 A, R _GS=25 Ω

V _GS

Gate source voltage

±20

¹⁾J-STD20 and JESD22

²⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

³⁾See figure 3 for more detailed information

⁴⁾See figure 13 for more detailed information

Rev.2.3

page 1

2009-10-29

12 3 4 5 6 7...9

中文翻译

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