品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | 开关脉冲光电二极管晶体管 | |
页数 | 文件大小 | 规格书 |
13页 | 1315K | |
描述 | ||
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. |
是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F5 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.7 |
雪崩能效等级(Eas): | 70 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 80 V |
最大漏极电流 (ID): | 19 A | 最大漏源导通电阻: | 0.0052 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F5 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 380 A | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC052N08NS5ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 19A I(D), 80V, 0.0052ohm, 1-Element, N-Channel, Silicon, Me | |
BSC054N04NS G | INFINEON |
获取价格 |
OptiMOS? 40V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和 | |
BSC054N04NSG | INFINEON |
获取价格 |
OptiMOS™3 Power-Transistor | |
BSC057N03LSG | INFINEON |
获取价格 |
OptiMOSTM3 Power-MOSFET | |
BSC057N03LSGXT | INFINEON |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Me | |
BSC057N03MSG | INFINEON |
获取价格 |
OptiMOS™3 M-Series Power-MOSFET | |
BSC057N08NS3 G | INFINEON |
获取价格 |
OptiMOS™ 系列是高效率解决方案的市场领导者,适用于发电(例如太阳能微逆变器)、电源 | |
BSC057N08NS3G | INFINEON |
获取价格 |
OptiMOS3 Power-Transistor | |
BSC057N08NS3GATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Me | |
BSC059N03S | INFINEON |
获取价格 |
OptiMOS2 Power-Transistor |