Datasheet > BFP520_10

BFP520_10

更新时间： 2024-11-11 08:52:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	107K
描述
NPN Silicon RF Transistor

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BFP520_10 数据手册

BFP520

NPN Silicon RF Transistor

• Low noise amplifier designed for low voltage

applications, ideal for 1.2 V or 1.8 V supply

voltage. Supports 2.9 V V with enough external

collector resistance.

• High gain and low noise at high frequencies

due to high transit frequency f = 45 GHz

• Finds usage e.g. in cordless phones and

satellite receivers

• Pb-free (RoHS compliant) standard package

with visible leads

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

BFP520

APs

Maximum Ratings at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

CEO

2.5

2.4

T = -55 °C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

°C

Base current

100

Total power dissipation

tot

T ≤ 105 °C

150

Junction temperature

Storage temperature

-55 ... 150

Stg

¹T is measured on the emitter lead at the soldering point to pcb

2010-08-16

12 3 4 5 6 7...10

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