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AUIRFSA8409-7P PDF预览

AUIRFSA8409-7P

更新时间: 2024-11-23 21:21:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 685K
描述
Power Field-Effect Transistor,

AUIRFSA8409-7P 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PSSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:7.86雪崩能效等级(Eas):1450 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):360 A
最大漏源导通电阻:0.00069 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G6湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):1440 A参考标准:AEC-Q101
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AUIRFSA8409-7P 数据手册

 浏览型号AUIRFSA8409-7P的Datasheet PDF文件第2页浏览型号AUIRFSA8409-7P的Datasheet PDF文件第3页浏览型号AUIRFSA8409-7P的Datasheet PDF文件第4页浏览型号AUIRFSA8409-7P的Datasheet PDF文件第5页浏览型号AUIRFSA8409-7P的Datasheet PDF文件第6页浏览型号AUIRFSA8409-7P的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRFSA8409-7P  
Features  
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
40V  
Advanced Process Technology  
New Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
0.50m  
0.69m  
523A  
360A  
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating. These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and wide variety  
of other applications.  
G
D
S
Applications  
Gate  
Drain  
Source  
Electric Power Steering (EPS)  
Battery Switch  
Start/Stop Micro Hybrid  
Heavy Loads  
DC-DC Applications  
Standard Pack  
Base Part Number  
Package Type  
Complete Part Number  
Form  
Tube  
Quantity  
50  
AUIRFSA8409-7P  
AUIRFSA8409-7P  
D2PAK-7TP  
Tape and Reel Left  
800  
AUIRFSA8409-7TRL  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
Pulsed Drain Current  
Max.  
523  
370  
360  
1440*  
375  
Units  
A
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
W
W/°C  
V
2.5  
± 20  
VGS  
TJ  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Avalanche Characteristics  
Single Pulse Avalanche Energy   
743  
EAS  
(Thermally Limited)  
(Thermally Limited)  
mJ  
Single Pulse Avalanche Energy   
Avalanche Current   
Repetitive Avalanche Energy   
1450  
EAS  
IAR  
EAR  
A
mJ  
See Fig. 14, 15, 24a, 24b  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2016-01-11  

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