Datasheet > 晶体管 > 功率场效应晶体管> AUIRFSL3207Z

AUIRFSL3207Z

更新时间： 2024-11-26 12:29:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
13页	266K
描述
Specifically designed for Automotive applications

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中文翻译

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AUIRFSL3207Z 数据手册

PD - 96403A

AUTOMOTIVE GRADE

AUIRFS3207Z

AUIRFSL3207Z

Features

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

HEXFET^®Power MOSFET

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

75V

3.3m

4.1m

170A

120A

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

siliconarea. Additionalfeaturesofthisdesign area175°C

junctionoperatingtemperature, fastswitchingspeedand

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

D²Pak

TO-262

AUIRFSL3207Z

wide variety of other applications.

AUIRFS3207Z

Gate

Drain

Source

Absolute Maximum Ratings

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications

is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal

resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(T_A)

is 25°C, unless otherwise specified.

Max.

Parameter

Units

I_D@ T_C= 25°C

170

Continuous Drain Current, VGS @ 10V (Silicon Limited)

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

120

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

120

670

P_D@T_C= 25°C

300

Maximum Power Dissipation

W/°C

2.0

Linear Derating Factor

V_GS

dv/dt

E_AS

I_AR

± 20

Gate-to-Source Voltage

170

Peak Diode Recovery

V/ns

Single Pulse Avalanche Energy (Thermally limited)

Avalanche Current

See Fig. 14, 15, 22a, 22b

E_AR

T_J

Repetitive Avalanche Energy

-55 to + 175

300

Operating Junction and

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient (PCB Mount) , D²Pak

Typ.

–––

Max.

0.50

Units

R_θJC

°C/W

R_θ

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

11/17/11

12 3 4 5 6 7...13

中文翻译

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