Datasheet > AUIRFSL3206

AUIRFSL3206

更新时间： 2024-11-26 12:53:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	292K
描述
Advanced Process Technology Ultra Low On-Resistance

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中文翻译

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AUIRFSL3206 数据手册

PD - 96401A

AUTOMOTIVE GRADE

AUIRFS3206

AUIRFSL3206

Features

HEXFET^®Power MOSFET

Advanced Process Technology

Ultra Low On-Resistance

V_(BR)DSS

R_DS(on)typ.

max.

60V

2.4m

3.0m

210A

Enhanced dV/dT and dI/dT capability

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

I_D

(Silicon Limited)

I_{D (Package Limited)}

120A

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniquestoachieveextremelylowon-resistancepersilicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitiveavalancherating. Thesefeaturescombinetomake

this design an extremely efficient and reliable device for use

in Automotive applications and a wide variety of other

D²Pak

TO-262

AUIRFSL3206

AUIRFS3206

applications.

Gate

Drain

Source

Absolute Maximum Ratings

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications

is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal

resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(T_A)

is 25°C, unless otherwise specified.

Max.

Parameter

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

210

150

120

840

Pulsed Drain Current

P_D@T_C= 25°C

300

Maximum Power Dissipation

Linear Derating Factor

W/°C

2.0

V_GS

± 20

170

Gate-to-Source Voltage

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery

V/ns

5.0

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient (PCB Mount) , D²Pak

Typ.

–––

Max.

0.50

Units

°C/W

R_θ

R_θJA

–––

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

09/06/11

12 3 4 5 6 7...13

中文翻译

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与AUIRFSL3206相关器件

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AUIRFSL3207Z	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRFSL3307Z	INFINEON	获取价格	Advanced Process Technology
AUIRFSL3607	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
AUIRFSL4010	INFINEON	获取价格	Automotive applications
AUIRFSL4115	INFINEON	获取价格	Power Field-Effect Transistor,
AUIRFSL4127	INFINEON	获取价格	Advanced Process Technology
AUIRFSL4310	INFINEON	获取价格	HEXFET Power MOSFET
AUIRFSL4410Z	INFINEON	获取价格	Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Me
AUIRFSL6535	INFINEON	获取价格	Advanced Process Technology Low On-Resistance
AUIRFSL8403	INFINEON	获取价格	Advanced Process Technology New Ultra Low On-Resistance

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