是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.31 |
Samacsys Confidence: | 4 | Samacsys Status: | Released |
Samacsys PartID: | 873882 | Samacsys Pin Count: | 3 |
Samacsys Part Category: | Transistor | Samacsys Package Category: | Transistor Outline, Vertical |
Samacsys Footprint Name: | TO-262 | Samacsys Released Date: | 2017-08-23 16:47:44 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY |
雪崩能效等级(Eas): | 318 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 180 A | 最大漏极电流 (ID): | 180 A |
最大漏源导通电阻: | 0.0047 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 375 W |
最大脉冲漏极电流 (IDM): | 720 A | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AUIRFSL4115 | INFINEON |
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Power Field-Effect Transistor, | |
AUIRFSL4127 | INFINEON |
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Advanced Process Technology | |
AUIRFSL4310 | INFINEON |
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HEXFET Power MOSFET | |
AUIRFSL4410Z | INFINEON |
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Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Me | |
AUIRFSL6535 | INFINEON |
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Advanced Process Technology Low On-Resistance | |
AUIRFSL8403 | INFINEON |
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Advanced Process Technology New Ultra Low On-Resistance | |
AUIRFSL8405 | INFINEON |
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Advanced Process Technology New Ultra Low On-Resistance | |
AUIRFSL8407 | INFINEON |
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Advanced Process Technology New Ultra Low On-Resistance | |
AUIRFSL8408 | INFINEON |
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NEW ULTRA LOW ON-RESISTANCE | |
AUIRFSL8409 | INFINEON |
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AUTOMOTIVE GRADE |