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AUIRFSL4010 PDF预览

AUIRFSL4010

更新时间: 2024-11-26 12:51:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲PC局域网
页数 文件大小 规格书
13页 662K
描述
Automotive applications

AUIRFSL4010 技术参数

是否Rohs认证:符合生命周期:Not Recommended
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.31
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:873882Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-262Samacsys Released Date:2017-08-23 16:47:44
Is Samacsys:N其他特性:AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
雪崩能效等级(Eas):318 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):180 A最大漏极电流 (ID):180 A
最大漏源导通电阻:0.0047 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):375 W
最大脉冲漏极电流 (IDM):720 A子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AUIRFSL4010 数据手册

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PD - 96396A  
AUTOMOTIVE GRADE  
AUIRFS4010  
Features  
AUIRFSL4010  
l
Advanced Process Technology  
UltraLowOn-Resistance  
HEXFET® Power MOSFET  
l
l
l
l
l
l
D
S
175°COperatingTemperature  
Fast Switching  
VDSS  
RDS(on) typ.  
100V  
3.9m  
4.7m  
180A  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
G
max.  
ID  
Description  
D
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
siliconarea. Additionalfeaturesofthisdesign area175°C  
junctionoperatingtemperature, fastswitchingspeedand  
improved repetitive avalanche rating . These features  
combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a  
wide variety of other applications.  
S
S
D
G
G
D2Pak  
AUIRFS4010  
TO-262  
AUIRFSL4010  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thesearestress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications  
is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal  
resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(TA)  
is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
180  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
127  
A
720  
PD @TC = 25°C  
375  
W
Maximum Power Dissipation  
Linear Derating Factor  
2.5  
W/°C  
V
VGS  
EAS  
IAR  
± 20  
318  
Gate-to-Source Voltage  
mJ  
A
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
See Fig. 14, 15, 22a, 22b  
EAR  
mJ  
Repetitive Avalanche Energy  
Peak Diode Recovery  
31  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.40  
40  
Units  
RθJC  
Junction-to-Case  
°C/W  
Rθ  
–––  
Junction-to-Ambient (PCB Mount)  
JA  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/1/11  

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