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AUIRFS4610 PDF预览

AUIRFS4610

更新时间： 2024-11-23 12:47:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
13页 346K
描述
AUTOMOTIVE GRADE

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AUIRFS4610 数据手册

 浏览型号AUIRFS4610的Datasheet PDF文件第2页浏览型号AUIRFS4610的Datasheet PDF文件第3页浏览型号AUIRFS4610的Datasheet PDF文件第4页浏览型号AUIRFS4610的Datasheet PDF文件第5页浏览型号AUIRFS4610的Datasheet PDF文件第6页浏览型号AUIRFS4610的Datasheet PDF文件第7页 
PD - 96325  
AUTOMOTIVE GRADE  
AUIRFB4610  
AUIRFS4610  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
Ultra Low On-Resistance  
D
S
V(BR)DSS  
RDS(on) typ.  
max.  
100V  
11m  
14m  
73A  
Enhanced dV/dT and dI/dT capability  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
G
ID  
D
Description  
D
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a wide variety  
of other applications.  
S
S
D
D
G
G
D2Pak  
AUIRFS4610  
TO-220AB  
AUIRFB4610  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Parameter  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
73  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
52  
A
290  
PD @TC = 25°C  
190  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
1.3  
VGS  
EAS  
IAR  
± 20  
370  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally limited)  
Avalanche Current  
mJ  
A
See Fig. 14, 15, 16a, 16b,  
EAR  
dV/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery  
mJ  
V/ns  
7.6  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Mounting torque, 6-32 or M3 screw  
300  
10lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.77  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat Greased Surface , TO-220  
0.50  
–––  
°C/W  
Junction-to-Ambient, TO-220  
Junction-to-Ambient (PCB Mount) , D2Pak  
–––  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/20/10  
1234567...13

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AUIRFS4610 替代型号

型号 品牌 替代类型 描述 数据表
IRFS4610TRLPBF INFINEON

类似代替

 High Efficiency Synchronous Rectification in SMPS
IRFS4610PBF INFINEON

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 HEXFET Power MOSFET
IRFS4610 INFINEON

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 IRFB4610 IRFS4610 IRFSL4610

与AUIRFS4610相关器件

型号 品牌 获取价格 描述 数据表
AUIRFS4610STRL INFINEON

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 		AUTOMOTIVE GRADE
AUIRFS4610STRR INFINEON

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 		AUTOMOTIVE GRADE
AUIRFS6535 INFINEON

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 		Advanced Process Technology Low On-Resistance
AUIRFS6535TRL INFINEON

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 		Advanced Process Technology Low On-Resistance
AUIRFS6535TRR INFINEON

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 		Advanced Process Technology Low On-Resistance
AUIRFS8403 INFINEON

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 		Advanced Process Technology New Ultra Low On-Resistance
AUIRFS8403TRL INFINEON

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 		Advanced Process Technology New Ultra Low On-Resistance
AUIRFS8403TRR INFINEON

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 		Advanced Process Technology New Ultra Low On-Resistance
AUIRFS8405 INFINEON

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 		Advanced Process Technology New Ultra Low On-Resistance
AUIRFS8405TRL INFINEON

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 		Advanced Process Technology New Ultra Low On-Resistance

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