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AUIRFS8408-7TRL

更新时间： 2024-11-23 15:28:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 296K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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AUIRFS8408-7TRL 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：16 weeks风险等级：5.15
配置：Single最大漏极电流 (Abs) (ID)：240 A
FET 技术：METAL-OXIDE SEMICONDUCTOR湿度敏感等级：1
最高工作温度：175 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：294 W
子类别：FET General Purpose Power表面贴装：YES
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

AUIRFS8408-7TRL 数据手册

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AUIRFS8408-7P  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
Advanced Process Technology  
40V  
VDSS  
New Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
0.70m  
RDS(on) typ.  
Ω
max.  
ID (Silicon Limited)  
ID (Package Limited)  
1.0m  
397A  
240A  
Ω
Description  
Specifically designed for Automotive applications, this HEXFET®  
PowerMOSFETutilizesthelatestprocessingtechniquestoachieve  
extremely low on-resistance per silicon area. Additional features  
of this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating. These  
features combine to make this product an extremely efficient and  
reliable device for use in Automotive and wide variety of other  
applications.  
D
S
D
S
S
G
S
S
S
G
D2Pak 7 Pin  
Applications  
l
l
l
l
l
Electric Power Steering (EPS)  
Battery Switch  
Start/Stop Micro Hybrid  
Heavy Loads  
SMPS  
G
Gate  
D
Drain  
S
Source  
Ordering Information  
Base part number  
Package Type  
Standard Pack  
Form  
Complete Part Number  
Quantity  
D2Pak 7 Pin  
AUIRFS8408-7P  
Tube  
50  
AUIRFS8408-7P  
Tape and Reel Left  
Tape and Reel Right  
800  
800  
AUIRFS8408-7TRL  
AUIRFS8408-7TRR  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Max.  
397  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
280  
240  
A
1300  
PD @TC = 25°C  
W
294  
Maximum Power Dissipation  
1.96  
± 20  
Linear Derating Factor  
Gate-to-Source Voltage  
W/°C  
V
VGS  
TJ  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
501  
809  
mJ  
EAS (tested)  
IAR  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
See Fig. 14, 15, 24a, 24b  
A
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
0.51  
40  
Units  
°C/W  
RqJC  
RqJA  
–––  
Junction-to-Case  
–––  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
© 2013 International Rectifier  
April 25 ,2013  
1234567...12

中文翻译

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AUIRFS8408-7TRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFS8408-7P INFINEON

完全替代

 Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

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