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AUIRFS8409-7P

更新时间： 2024-11-23 12:56:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 282K
描述
HEXFETPower MOSFET

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中文翻译

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AUIRFS8409-7P 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：7.05配置：Single
最大漏极电流 (Abs) (ID)：240 AFET 技术：METAL-OXIDE SEMICONDUCTOR
湿度敏感等级：1最高工作温度：175 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：375 W子类别：FET General Purpose Power
表面贴装：YES处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

AUIRFS8409-7P 数据手册

 浏览型号AUIRFS8409-7P的Datasheet PDF文件第2页浏览型号AUIRFS8409-7P的Datasheet PDF文件第3页浏览型号AUIRFS8409-7P的Datasheet PDF文件第4页浏览型号AUIRFS8409-7P的Datasheet PDF文件第5页浏览型号AUIRFS8409-7P的Datasheet PDF文件第6页浏览型号AUIRFS8409-7P的Datasheet PDF文件第7页 
AUIRFS8403  
AUIRFSL8403  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
Advanced Process Technology  
D
S
VDSS  
40V  
New Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
max.  
2.6mΩ  
3.3mΩ  
123A  
G
ID  
(Silicon Limited)  
Description  
Specifically designed for Automotive applications, this HEXFET®  
PowerMOSFETutilizesthelatestprocessingtechniquestoachieve  
extremely low on-resistance per silicon area. Additional features  
of this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating. These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and wide variety  
of other applications.  
D
D
S
S
D
G
G
D2Pak  
AUIRFS8403  
TO-262  
AUIRFSL8403  
Applications  
l
l
l
l
l
Electric Power Steering (EPS)  
Battery Switch  
Start/Stop Micro Hybrid  
Heavy Loads  
G
Gate  
D
Drain  
S
Source  
DC-DC Converter  
Ordering Information  
Base part number  
Package Type  
Standard Pack  
Form  
Complete Part Number  
Quantity  
50  
AUIRFSL8403  
AUIRFS8403  
TO-262  
D2Pak  
Tube  
AUIRFSL8403  
AUIRFS8403  
Tube  
50  
Tape and Reel Left  
Tape and Reel Right  
800  
800  
AUIRFS8403TRL  
AUIRFS8403TRR  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
Parameter  
Max.  
123  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
87  
A
492  
99  
PD @TC = 25°C  
Maximum Power Dissipation  
W
W/°C  
V
0.66  
Linear Derating Factor  
± 20  
VGS  
TJ  
Gate-to-Source Voltage  
-55 to + 175  
Operating Junction and  
°C  
TSTG  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Avalanche Characteristics  
111  
160  
EAS (Thermally limited)  
Single Pulse Avalanche Energy  
mJ  
EAS (tested)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
IAR  
A
See Fig. 14, 15 , 24a, 24b  
EAR  
Repetitive Avalanche Energy  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
Rθ  
Rθ  
Junction-to-Case  
–––  
–––  
1.52  
40  
JC  
°C/W  
Junction-to-Ambient (PCB Mount) D2 Pak  
JA  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
© 2013 International Rectifier  
May 08 2013  
1234567...13

中文翻译

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AUIRFS8409-7P 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFS8409-7TRR INFINEON

完全替代

 HEXFETPower MOSFET
AUIRFS8409-7TRL INFINEON

类似代替

 HEXFETPower MOSFET

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AUIRFSL3107 INFINEON

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AUIRFSL3206 INFINEON

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AUIRFSL3207Z INFINEON

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 		Specifically designed for Automotive applications
AUIRFSL3307Z INFINEON

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 		Advanced Process Technology
AUIRFSL3607 INFINEON

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 		Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met

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