Datasheet > AUIRFS8408TRL

AUIRFS8408TRL

更新时间： 2024-11-23 12:54:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	297K
描述
NEW ULTRA LOW ON-RESISTANCE

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

AUIRFS8408TRL 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.66	配置：	Single
最大漏极电流 (Abs) (ID)：	195 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	294 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

AUIRFS8408TRL 数据手册

AUIRFS8408

AUIRFSL8408

AUTOMOTIVE GRADE

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

40V

New Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

1.3m

1.6m

317A

195A

Description

Specifically designed for Automotive applications, this HEXFET®

PowerMOSFETutilizesthelatestprocessingtechniquestoachieve

extremely low on-resistance per silicon area. Additional features

of this design are a 175°C junction operating temperature, fast

switching speed and improved repetitive avalanche rating. These

features combine to make this product an extremely efficient and

reliable device for use in Automotive and wide variety of other

applications.

D²Pak

TO-262

Applications

AUIRFSL8408

AUIRFS8408

Electric Power Steering (EPS)

Battery Switch

Start/Stop Micro Hybrid

Heavy Loads

SMPS

Gate

Drain

Source

Ordering Information

Base part number

Package Type

Standard Pack

Form

Complete Part Number

Quantity

AUIRFSL8408

AUIRFS8408

TO-262

D²Pak

Tube

AUIRFSL8408

AUIRFS8408

Tape and Reel Left

Tape and Reel Right

800

AUIRFS8408TRL

AUIRFS8408TRR

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

Parameter

Max.

317

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

224

195

1270

P_D@T_C= 25°C

294

Maximum Power Dissipation

1.96

Linear Derating Factor

W/°C

V_GS

T_J

± 20

Gate-to-Source Voltage

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

Avalanche Characteristics

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

490

800

E_{AS (tested)}

I_AR

Single Pulse Avalanche Energy Tested Value

Avalanche Current

See Fig. 14, 15, 24a, 24b

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.51

Units

°C/W

R_θ_JC

Junction-to-Case

R_θ_JA

–––

Junction-to-Ambient (PCB Mount)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

April 25, 2013

12 3 4 5 6 7...13

中文翻译

下载PDF

AUIRFS8408TRL 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFS8408	INFINEON	功能相似	NEW ULTRA LOW ON-RESISTANCE

与AUIRFS8408TRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRFS8408TRR	INFINEON	获取价格	NEW ULTRA LOW ON-RESISTANCE
AUIRFS8409	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFS8409-7P	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS8409-7TRL	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS8409-7TRR	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS8409TRL	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFSA8409-7P	INFINEON	获取价格	Power Field-Effect Transistor,
AUIRFSL3004	INFINEON	获取价格	Advanced Process Technology Ultra Low On-Resistance
AUIRFSL3107	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFSL3206	INFINEON	获取价格	Advanced Process Technology Ultra Low On-Resistance

与AUIRFS8408TRL相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRFS8408TRL

AUIRFS8408TRL 技术参数

AUIRFS8408TRL 数据手册

AUIRFS8408TRL 替代型号

与AUIRFS8408TRL相关器件

与AUIRFS8408TRL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRFS8408TRL

AUIRFS8408TRL 技术参数

AUIRFS8408TRL 数据手册

AUIRFS8408TRL 替代型号

与AUIRFS8408TRL相关器件

与AUIRFS8408TRL相关文章

您还可以找

您在本页遇到什么问题？