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AUIRFS8403TRR

更新时间： 2024-11-23 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 282K
描述
Advanced Process Technology New Ultra Low On-Resistance

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AUIRFS8403TRR 数据手册

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AUIRFS8403  
AUIRFSL8403  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
Advanced Process Technology  
D
S
VDSS  
40V  
New Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
max.  
2.6mΩ  
3.3mΩ  
123A  
G
ID  
(Silicon Limited)  
Description  
Specifically designed for Automotive applications, this HEXFET®  
PowerMOSFETutilizesthelatestprocessingtechniquestoachieve  
extremely low on-resistance per silicon area. Additional features  
of this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating. These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and wide variety  
of other applications.  
D
D
S
S
D
G
G
D2Pak  
AUIRFS8403  
TO-262  
AUIRFSL8403  
Applications  
l
l
l
l
l
Electric Power Steering (EPS)  
Battery Switch  
Start/Stop Micro Hybrid  
Heavy Loads  
G
Gate  
D
Drain  
S
Source  
DC-DC Converter  
Ordering Information  
Base part number  
Package Type  
Standard Pack  
Form  
Complete Part Number  
Quantity  
50  
AUIRFSL8403  
AUIRFS8403  
TO-262  
D2Pak  
Tube  
AUIRFSL8403  
AUIRFS8403  
Tube  
50  
Tape and Reel Left  
Tape and Reel Right  
800  
800  
AUIRFS8403TRL  
AUIRFS8403TRR  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
Parameter  
Max.  
123  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
87  
A
492  
99  
PD @TC = 25°C  
Maximum Power Dissipation  
W
W/°C  
V
0.66  
Linear Derating Factor  
± 20  
VGS  
TJ  
Gate-to-Source Voltage  
-55 to + 175  
Operating Junction and  
°C  
TSTG  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Avalanche Characteristics  
111  
160  
EAS (Thermally limited)  
Single Pulse Avalanche Energy  
mJ  
EAS (tested)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
IAR  
A
See Fig. 14, 15 , 24a, 24b  
EAR  
Repetitive Avalanche Energy  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
Rθ  
Rθ  
Junction-to-Case  
–––  
–––  
1.52  
40  
JC  
°C/W  
Junction-to-Ambient (PCB Mount) D2 Pak  
JA  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
© 2013 International Rectifier  
May 08 2013  
1234567...13

中文翻译

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AUIRFS8403TRR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFS8403 INFINEON

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