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AUIRFS8405 PDF预览

AUIRFS8405

更新时间： 2024-11-26 12:30:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 357K
描述
Advanced Process Technology New Ultra Low On-Resistance

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中文翻译

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AUIRFS8405 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：0.9Is Samacsys：N
配置：Single最大漏极电流 (Abs) (ID)：120 A
FET 技术：METAL-OXIDE SEMICONDUCTOR湿度敏感等级：1
最高工作温度：175 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：163 W
子类别：FET General Purpose Power表面贴装：YES
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

AUIRFS8405 数据手册

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AUIRFS8405  
AUIRFSL8405  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
Advanced Process Technology  
D
S
New Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
VDSS  
40V  
RDS(on) typ.  
max.  
1.9mΩ  
2.3mΩ  
G
ID  
193A  
(Silicon Limited)  
ID  
120A  
(Package Limited)  
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniquestoachieveextremelylowon-resistancepersilicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitive avalanche rating. These features combine to make  
this design an extremely efficient and reliable device for use  
inAutomotiveapplicationsandwidevarietyofotherapplications.  
D
D
S
D
S
D
G
D2Pak  
G
TO-262  
AUIRFSL8405  
AUIRFS8405  
Applications  
l
l
l
l
l
Electric Power Steering (EPS)  
Battery Switch  
Start/Stop Micro Hybrid  
Heavy Loads  
G
Gate  
D
Drain  
S
Source  
DC-DCApplications  
Base part number  
Package Type  
Standard Pack  
Form  
Complete Part Number  
Quantity  
AUIRFSL8405  
AUIRFS8405  
TO-262  
D2Pak  
Tube  
Tube  
50  
50  
AUIRFSL8405  
AUIRFS8405  
Tape and Reel Left  
Tape and Reel Right  
800  
800  
AUIRFS8405TRL  
AUIRFS8405TRR  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
193  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
137  
A
120  
904  
163  
PD @TC = 25°C  
Maximum Power Dissipation  
W
W/°C  
V
1.1  
Linear Derating Factor  
± 20  
VGS  
TJ  
Gate-to-Source Voltage  
-55 to + 175  
Operating Junction and  
°C  
TSTG  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Mounting torque, 6-32 or M3 screw  
10lbf in (1.1N m)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com © 2013 International Rectifier  
April 30, 2013  
1
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中文翻译

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AUIRFS8405 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFS8405TRL INFINEON

类似代替

 Advanced Process Technology New Ultra Low On-Resistance
AUIRFS8405TRR INFINEON

功能相似

 Advanced Process Technology New Ultra Low On-Resistance

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AUIRFS8407-7P INFINEON

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AUIRFS8407-7TRL INFINEON

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AUIRFS8407-7TRR INFINEON

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AUIRFS8407TRL INFINEON

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 		Advanced Process Technology New Ultra Low On-Resistance
AUIRFS8408 INFINEON

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AUIRFS8408-7P INFINEON

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 		Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
AUIRFS8408-7TRL INFINEON

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