AUIRFS8405
AUIRFSL8405
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
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Advanced Process Technology
D
S
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
VDSS
40V
RDS(on) typ.
max.
1.9mΩ
2.3mΩ
G
ID
193A
(Silicon Limited)
ID
120A
(Package Limited)
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniquestoachieveextremelylowon-resistancepersilicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use
inAutomotiveapplicationsandwidevarietyofotherapplications.
D
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D2Pak
G
TO-262
AUIRFSL8405
AUIRFS8405
Applications
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Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
G
Gate
D
Drain
S
Source
DC-DCApplications
Base part number
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRFSL8405
AUIRFS8405
TO-262
D2Pak
Tube
Tube
50
50
AUIRFSL8405
AUIRFS8405
Tape and Reel Left
Tape and Reel Right
800
800
AUIRFS8405TRL
AUIRFS8405TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Max.
193
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
137
A
120
904
163
PD @TC = 25°C
Maximum Power Dissipation
W
W/°C
V
1.1
Linear Derating Factor
± 20
VGS
TJ
Gate-to-Source Voltage
-55 to + 175
Operating Junction and
°C
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
10lbf in (1.1N m)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com © 2013 International Rectifier
April 30, 2013
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