Datasheet > AUIRFS8407-7P

AUIRFS8407-7P

更新时间： 2024-01-25 21:37:29

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	220K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册
替代型号

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AUIRFS8407-7P 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.67	配置：	Single
最大漏极电流 (Abs) (ID)：	240 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	231 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

AUIRFS8407-7P 数据手册

AUTOMOTIVE GRADE

AUIRFS8407-7P

Features

HEXFET^®Power MOSFET



AdvancedProcessTechnology

NewUltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

RepetitiveAvalancheAlloweduptoTjmax

Lead-Free,RoHSCompliant

AutomotiveQualified*

V_DSS

40V

R_DS(on)typ.

max.

1.0mΩ

1.3mΩ

I_D

306A

(Silicon Limited)

Description

I_D

240A

(Package Limited)

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniquestoachieveextremelylowon-resistancepersilicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating. These features combine to make

thisdesignanextremelyefficientandreliabledeviceforusein

Automotiveapplicationsandwidevarietyofotherapplications.

Applications

D²Pak7Pin



Electric Power Steering (EPS)

Battery Switch

Start/Stop Micro Hybrid

HeavyLoads

Gate

Drain

Source

DC-DCApplications

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tube

Tape and Reel Left

Tape and Reel Right

Quantity

AUIRFS8407-7P

AUIRFS8407-7TRL

AUIRFS8407-7TRR

AUIRFS8407-7P

D2Pak-7PIN

800

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

306

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

216



240

1040

Pulsed Drain Current



231

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

1.5

W/°C

± 20

V_GS

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

E_{AS (Thermally limited)}

344

508

E_{AS (tested)}

I_AR

Single Pulse Avalanche Energy Tested Value

Avalanche Current





See Fig. 14, 15, 24a, 24b

Repetitive Avalanche Energy 

Operating Junction and

E_AR

-55 to + 175

300

T_J

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

April 30, 2013

12 3 4 5 6 7...12

中文翻译

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AUIRFS8407-7P 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFS8407-7TRR	INFINEON	类似代替	HEXFETÂ® Power MOSFET
AUIRFS8407-7TRL	INFINEON	类似代替	HEXFETÂ® Power MOSFET

与AUIRFS8407-7P相关器件

型号	品牌	获取价格	描述	数据表
AUIRFS8407-7TRL	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRFS8407-7TRR	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRFS8407TRL	INFINEON	获取价格	Advanced Process Technology New Ultra Low On-Resistance
AUIRFS8408	INFINEON	获取价格	NEW ULTRA LOW ON-RESISTANCE
AUIRFS8408-7P	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
AUIRFS8408-7TRL	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFS8408TRL	INFINEON	获取价格	NEW ULTRA LOW ON-RESISTANCE
AUIRFS8408TRR	INFINEON	获取价格	NEW ULTRA LOW ON-RESISTANCE
AUIRFS8409	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFS8409-7P	INFINEON	获取价格	HEXFETPower MOSFET

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