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AUIRFS4610STRL

更新时间： 2024-09-30 12:47:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
13页	346K
描述
AUTOMOTIVE GRADE

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AUIRFS4610STRL 数据手册

PD - 96325

AUTOMOTIVE GRADE

AUIRFB4610

AUIRFS4610

HEXFET^®Power MOSFET

Features

Advanced Process Technology

Ultra Low On-Resistance

V_(BR)DSS

R_DS(on)typ.

max.

100V

11m

14m

73A

Enhanced dV/dT and dI/dT capability

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

I_D

Description

Specifically designed for Automotive applications, this HEXFET^®

Power MOSFET utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of

this design are a 175°C junction operating temperature, fast

switching speed and improved repetitive avalanche rating . These

features combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a wide variety

of other applications.

D²Pak

AUIRFS4610

TO-220AB

AUIRFB4610

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

290

P_D@T_C= 25°C

190

Maximum Power Dissipation

Linear Derating Factor

W/°C

1.3

V_GS

E_AS

I_AR

± 20

370

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Avalanche Current

See Fig. 14, 15, 16a, 16b,

E_AR

dV/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery

V/ns

7.6

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

300

10lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.77

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

Case-to-Sink, Flat Greased Surface , TO-220

0.50

–––

°C/W

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D²Pak

–––

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

07/20/10

12 3 4 5 6 7...13

中文翻译

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与AUIRFS4610STRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRFS4610STRR	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFS6535	INFINEON	获取价格	Advanced Process Technology Low On-Resistance
AUIRFS6535TRL	INFINEON	获取价格	Advanced Process Technology Low On-Resistance
AUIRFS6535TRR	INFINEON	获取价格	Advanced Process Technology Low On-Resistance
AUIRFS8403	INFINEON	获取价格	Advanced Process Technology New Ultra Low On-Resistance
AUIRFS8403TRL	INFINEON	获取价格	Advanced Process Technology New Ultra Low On-Resistance
AUIRFS8403TRR	INFINEON	获取价格	Advanced Process Technology New Ultra Low On-Resistance
AUIRFS8405	INFINEON	获取价格	Advanced Process Technology New Ultra Low On-Resistance
AUIRFS8405TRL	INFINEON	获取价格	Advanced Process Technology New Ultra Low On-Resistance
AUIRFS8405TRR	INFINEON	获取价格	Advanced Process Technology New Ultra Low On-Resistance

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