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AUIRFS4610STRR PDF预览

AUIRFS4610STRR

更新时间： 2024-01-09 12:17:33
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
13页 346K
描述
AUTOMOTIVE GRADE

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AUIRFS4610STRR 技术参数

是否Rohs认证： 符合生命周期：End Of Life
包装说明：D2PAK-3/2Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.68其他特性：ULTRA LOW RESISTANCE
雪崩能效等级（Eas）：370 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (ID)：73 A最大漏源导通电阻：0.014 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：290 A
参考标准：AEC-Q101表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFS4610STRR 数据手册

 浏览型号AUIRFS4610STRR的Datasheet PDF文件第2页浏览型号AUIRFS4610STRR的Datasheet PDF文件第3页浏览型号AUIRFS4610STRR的Datasheet PDF文件第4页浏览型号AUIRFS4610STRR的Datasheet PDF文件第5页浏览型号AUIRFS4610STRR的Datasheet PDF文件第6页浏览型号AUIRFS4610STRR的Datasheet PDF文件第7页 
PD - 96325  
AUTOMOTIVE GRADE  
AUIRFB4610  
AUIRFS4610  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
Ultra Low On-Resistance  
D
S
V(BR)DSS  
RDS(on) typ.  
max.  
100V  
11m  
14m  
73A  
Enhanced dV/dT and dI/dT capability  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
G
ID  
D
Description  
D
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a wide variety  
of other applications.  
S
S
D
D
G
G
D2Pak  
AUIRFS4610  
TO-220AB  
AUIRFB4610  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Parameter  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
73  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
52  
A
290  
PD @TC = 25°C  
190  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
1.3  
VGS  
EAS  
IAR  
± 20  
370  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally limited)  
Avalanche Current  
mJ  
A
See Fig. 14, 15, 16a, 16b,  
EAR  
dV/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery  
mJ  
V/ns  
7.6  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Mounting torque, 6-32 or M3 screw  
300  
10lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.77  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat Greased Surface , TO-220  
0.50  
–––  
°C/W  
Junction-to-Ambient, TO-220  
Junction-to-Ambient (PCB Mount) , D2Pak  
–––  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/20/10  
1234567...13

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