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AUIRFS6535

更新时间： 2024-02-25 04:04:02
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 272K
描述
Advanced Process Technology Low On-Resistance

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AUIRFS6535 数据手册

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AUTOMOTIVE GRADE  
AUIRFS6535  
AUIRFSL6535  
Features  
HEXFET® Power MOSFET  
●
●
●
●
●
●
●
Advanced Process Technology  
D
LowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
V(BR)DSS  
300V  
RDS(on) typ.  
148m  
185m  
19A  
G
max.  
S
ID  
Description  
D
SpecificallydesignedforAutomotiveapplications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistancepersiliconarea. Additionalfeatures  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitiveavalancherating. Thesefeaturescom-  
bine to make this design an extremely efficient  
andreliabledeviceforuseinAutomotiveapplica-  
tions and a wide variety of other applications.  
D
S
D
S
D
G
G
D2Pak  
AUIRFS6535  
TO-262  
AUIRFSL6535  
G
D
Drain  
S
Gate  
Source  
Base part  
number  
Package Type  
Standard Pack  
Orderable Part Number  
Form  
Tube  
Tube  
Quantity  
50  
AUIRFSL6535  
AUIRFS6535  
TO-262  
D2Pak  
AUIRFSL6535  
AUIRFS6535  
50  
Tape and Reel Left  
Tape and Reel Right  
800  
800  
AUIRFS6535TRL  
AUIRFS6535TRR  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
19  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V  
13  
A
Pulsed Drain Current  
IDM  
100  
PD @TC = 25°C  
Power Dissipation  
210  
1.4  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
Gate-to-Source Voltage  
± 20  
Single Pulse Avalanche Energy (Thermally Limited)  
216  
310  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
TJ  
mJ  
Operating Junction and  
-55 to + 175  
300  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.71  
40  
Units  
R  
R  
Junction-to-Case  
Junction-to-Ambient (PCB Mount)  
°C/W  
JC  
JA  
–––  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com © 2012 International Rectifier  
July 23, 2012  
1
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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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