生命周期: | Contact Manufacturer | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | compliant |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.68 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏源导通电阻: | 0.028 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP2606GY | A-POWER |
获取价格 |
TRANSISTOR 7 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-6, F | |
AP2606GY-HF | A-POWER |
获取价格 |
Fast Switching Characteristic, Lower Gate Charge | |
AP2607AGY-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Small Package Outline | |
AP2607GY-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Small Package Outline | |
AP2608AGK-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2608AGY-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2608GY | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2609GY-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Small Package Outline | |
AP2609GYT-HF | A-POWER |
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Simple Drive Requirement, Small Size & Lower Profile | |
AP2610GY-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |