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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| AP26G40GEO-HF | A-POWER |
获取价格 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
|
| AP-2702701% | VISHAY |
获取价格 |
General Purpose Inductor, 270uH, 1%, 1 Element, Ferrite-Core |
|
| AP-27027010% | VISHAY |
获取价格 |
General Purpose Inductor, 270uH, 10%, 1 Element, Ferrite-Core |
|
| AP-27027015% | VISHAY |
获取价格 |
General Purpose Inductor, 270uH, 15%, 1 Element, Ferrite-Core |
|
| AP-2702705% | VISHAY |
获取价格 |
General Purpose Inductor, 270uH, 5%, 1 Element, Ferrite-Core |
|
| AP-27271% | VISHAY |
获取价格 |
General Purpose Inductor, 27uH, 1%, 1 Element, Ferrite-Core |
|
| AP-272710% | VISHAY |
获取价格 |
General Purpose Inductor, 27uH, 10%, 1 Element, Ferrite-Core |
|
| AP-272715% | VISHAY |
获取价格 |
General Purpose Inductor, 27uH, 15%, 1 Element, Ferrite-Core |
|
| AP-27275% | VISHAY |
获取价格 |
General Purpose Inductor, 27uH, 5%, 1 Element, Ferrite-Core |
|
| AP2732GK | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
解析光耦仿真器：升级光耦合器技术的必要性
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台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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