Datasheet > AP2762JB-A-HF

AP2762JB-A-HF

更新时间： 2024-11-06 20:01:15

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	90K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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技术参数
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AP2762JB-A-HF 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.66	Base Number Matches：	1

AP2762JB-A-HF 数据手册

AP2762JB-A-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% Avalanche Test

BV_DSS

R_DS(ON)

I_D

650V

1.4Ω

4.1A

▼ Fast Switching Characteristic

▼ Simple Drive Requirement

▼ RoHS Compliant & Halogen-Free

Description

AP2762 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and

fast switching performance. It provides the designer with an extreme

efficient device for use in a wide range of power applications.

The TO-251S short lead package is preferred for all commercial-

industrial through-hole applications without lead-cutted.

TO-251S(JB)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

650

+20

Gate-Source Voltage

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

4.1

2.6

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

62.5

℃

Total Power Dissipation

1.13

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

Rthj-a

110

Data & specifications subject to change without notice

201308131

12 3 4

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